IPA180N10N3G datasheet, power-transistor equivalent, Infineon Technologies

Features and benefits

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C.

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TAGS

IPA180N10N3G

Power-Transistor

Infineon Technologies

Manufacturer

Infineon (https://www.infineon.com/) Technologies

Related datasheet

IPA180N10N3G Datasheet, Infineon Technologies

Features and benefits